More information: Shih-Hung Cheng et al, Gate-controllable two-dimensional transition metal dichalcogenides for spintronic memory, Journal of Alloys and Compounds (2024). DOI: 10.1016/j.jallcom.

Their study establishes how such transistors can be uniquely engineered with 2D semiconductors. Three-dimensional gate-all-around CMOS field-effect transistors in the form of a nano-sheet, a nano-fork ...