Advances in materials and architecture could lead to silicon-free chip manufacturing thanks to a new type of transistor.

Since 2011, vendors have been shipping chips based on one advanced transistor type—finFETs. However, finFETs will soon approach its limits, prompting the need for a new technology at the 3nm and/or ...

Consequently, the industry made the switch from 2D planar transistors to 3D fin field-effect transistors, abbreviated as FinFETs. In FinFET transistors, the gate wraps around the channel on three ...

One option is to retrace the path of ‘logic’ and move from planar high-k/metal-gate transistors to FinFETs. The logic roadmap made this transition as early as 2011 after R&D clearly showed the ...

FinFET Transistor Basics A finFET — a type of field-effect transistor (FET) — can be envisioned as a traditional planar CMOS transistor turned on its side so that the gate polysilicon can interface ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

Nowadays, the industry is moving from the usage of planner transistor technology due to various limitations encountered below 32nm technology node. We discuss new device structures: SOI and FinFET ...

A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

Intel is promising a 10-15 percent increase in performance-per-watt over 10nm SuperFin, thanks to new FinFET transistor optimizations. The second node is called Intel 4, which was previously ...