A world-first N-polar GaN wafer created by Chinese scientists could be a game changer for the semiconductor industry.

The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

global semiconductor giant Infineon Technologies pioneered the development of the world’s first 300 mm power gallium nitride (GaN) wafer technology. While GaN semiconductors have been in use ...

Chinese wafer foundry Epiworld, is seeking an IPO boost from investors, as it fumbles with falling wafer prices, and declining revenues.

Dutch exports to China dropped in March, ASML Holding neared clearing backlog from China. EUV market to reach $35.70 billion ...

This achievement, accomplished via metal-organic chemical vapor deposition (MOCVD) on a gallium nitride ... Seokho Moon et al, Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN ...