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Plasma technique doubles etch rate for 3D NAND flash memory - MSNAnother chemical compound the researchers studied was ammonium fluorosilicate, which forms during the etching process when the silicon nitride reacts with the hydrogen fluoride.
Dutch researcher Michiel Blauw has described the physical limitations of the plasma-etching of deep, narrow microstructures in silicon. His results have led to such an improvement in the etching ...
Silicon is the best-known semiconductor material. However, controlled nanostructuring drastically alters the material's properties. Using a specially developed etching apparatus, a team at HZB has ...
Several etch vendors are starting to ship next-generation selective etch tools, paving the way for new memory and logic devices. Applied Materials was the first vendor to ship a next-gen selective ...
Engineers in the CNST NanoFab have developed a new plasma etching technique for silicon which improves the etch rate, the mask selectivity, and the sidewall profile by optimizing the addition of argon ...
A team of physicists has uncovered some of the physics that make possible the etching of silicon computer chips, which power cell phones, computers, and a huge range of electronic devices.
In the semiconductor manufacturing process, etching equipment can be regarded as the core equipment, and ceramic cavities are ...
OSAKA, Japan — Mitsubishi Electric Corp. has developed a single-step, hydrofluoric acid electrochemical etching process that can achieve an aspect ratio greater than 60:1 at potentially a tenth of the ...
Making microchips for our electronics means doing some pretty detailed work. A big part of that is something called etching ...
Dutch researcher Michiel Blauw has described the physical limitations of the plasma-etching of deep, narrow microstructures in silicon. His results have led to such an improvement in the etching ...
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