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As electronic devices become more advanced, integrating complex logic into a single component becomes essential. Enter AND6, ...
SK hynix to reportedly change wafer cutting for its next-gen HBM4 memory and 400-layer NAND flash, as they're becoming ...
NAND flash manufacturers have been implementing production cuts, leading to urgent orders to surge and leaving a supply ...
We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature. As expected, the ...
We propose an electron back-tunneling (EBT) method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory. The storage of back-tunneled electrons in the spacer region between ...
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