Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. LEUVEN (Belgium), June 12, 2025 — Imec, ...

Abstract: In this paper the distortion components are defined for elementary transistor stages such as a single-transistor amplifier and a differential pair using bipolar transistors or MOSTs.

Abstract: Base diffusion isolated transistors (BDI) designed for low power, nonsaturating, integrated circuits have been fabricated. Buried collectors are unnecessary in these low power devices, ...