The research ' 3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si ...

A new technical paper titled “Performance, efficiency, and cost analysis of wafer-scale AI accelerators vs. single-chip GPUs” ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...

Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Okmetic, the leading supplier of advanced silicon wafers for the RF market, is showcasing its products at the International Microwave Symposium. Come meet our experts at booth #1816 to discuss how our ...

Abstract: In this paper, we report on the challenges related to growth and processing of 200 mm GaN-on-Si wafers in a CMOS fab. We describe the Au free process we developed as well as how we assure ...

Abstract: This paper evaluates the applicability of pulsed I-V measurements as a tool for accurately extracting nonlinear gallium nitride (GaN)-based heterojunction field-effect transistor (HFET) ...

The key advantage this substrate also brings is that the CTE is matched to GaN over a wide temperature range that encompasses the high-temperature epi growth conditions as well as the subsequent ...

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea ...