Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

Analog Circuit Design Using MOS Transistors Publication Trend The graph below shows the total number of publications each year in Analog Circuit Design Using MOS Transistors.

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors ...

The paper presents switching process comparison among the gallium nitride (GaN) and the Superjunction (SJ) MOSFET transistors applied in the resonant switched-capacitor (SC) DC-DC converter. The ...