Producing densely packed high aspect ratio In0.53Ga0.47As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry ...

This paper reports research performed on developing and optimizing a process recipe for the plasma etching of deep high-aspect ratio features into silicon carbide (SiC) material using an ...

The BARC as a lower cost structure material is widely used in IC manufacture. For I4nm technology node, it is used to determined ion implantation area. However, the ideal BRAC profile is hard to ...