A new palladium-loaded amorphous InGaZnOx (a-IGZO) catalyst achieved over 91% selectivity when converting carbon dioxide to ...

Until recently, most studies on subgap states focused on amorphous IGZO, as sufficiently large single-crystal IGZO (sc-IGZO) ...

III-V semiconductor lasers can be monolithically integrated with photonic chips by directly growing a crystalline layer of laser material, such as indium arsenide, on silicon substrate. However, ...

A research team affiliated with UNIST has unveiled a new semiconductor device optimized for the next-generation 6G era and ...

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

Next-generation optical inspection is about more than just sensitivity. It’s about reliably seeing through complexity.

Abstract Vanadium oxide (VOx) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due ...

Quantum sensors have become important tools in low-energy particle physics. Michael Doser explores opportunities to exploit ...

Abstract: In the current work, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated. The confinement of electrons in the momentum space is incorporated in ...

We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / ...