News

Semiconductor Engineering1d
Dielectrics for 2D TMDs, Including Deposition Strategies And Emerging Dielectric Materials (Cambridge)
A new technical paper titled “Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide ...
EDN6d
Isolated driver enables fast, stable GaN control
Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment ...
IEEE23h
Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics - IEEE Xplore
We report on the fabrication and study of graphene gate GaN/AlGaN fin-shaped field effect transistors. The investigated DC, noise, and sub-sub-THz properties indicate their prospective for transparent ...
IEEE2d
Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels - IEEE Xplore
We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel. Here, the ...