Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

The project 'GENIE-RFIC: Generative ENgine for Intelligent and Expedited RFIC Design' will focus on GaN MMICs and CMOS RFICs.

From June 10 to 12 at GreenTech 2025 in Amsterdam, Ams Osram will be exhibiting its latest-generation of LED and sensor ...

Ontario-based VueReal, the developer of MicroSolid Printing technology, has announced a partnership with ACA TMetrix, a ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Compared to standard SWIR LEDs, radiant power output of DOWA‘s SMD is higher by 46 percent at the 1,300 nm wavelength range ...

Engineers and researchers who work with diamond for quantum sensors, power electronics or thermal management technologies ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...

MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

This increased optical power output enables higher measurement precision and accelerated processing of biological samples, ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...