NAND flash manufacturers have been implementing production cuts, leading to urgent orders to surge and leaving a supply ...

A BiCMOS scaling analysis is carried out to optimize the performance of digital BiCMOS gates while accounting for the conditions that make the direct application of conventional BJT and MOS scaling ...

We propose an electron back-tunneling (EBT) method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory. The storage of back-tunneled electrons in the spacer region between ...