Electricity can be easily converted into heat—every electric cooker does it. But is the opposite also possible? Can heat be ...

The report also suggests Apple will likely debut this advanced LTPO technology – sometimes called “LTPO3” – in a 2027 version ...

Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...

Abstract: We report on the drift-diffusion based simulation of a wurtzite (WZ) GaN MESFET. The main emphasis is put on the influence of electron mobility modeling on DC current-voltage (I-V) ...

Shrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th ...

“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...

Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

This study introduces a method for generating isolated attosecond soft X-ray FELs, enhancing signal-to-noise ratios through ...