NVIDIA's Jensen Huang said during a Q&A session at GTC 2025 that he expects GAA to be 20% better than the current FinFET technology.
During a Q&A session at the GPU Technology Conference, Huang estimated a roughly 20% performance uplift from transitioning to ...
Advances in materials and architecture could lead to silicon-free chip manufacturing thanks to a new type of transistor.
GIDL is primarily caused by band-to-band tunneling (BTBT) at the drain junction under high electric field conditions. This ...
The new bismuth-based transistor could revolutionize chip design, offering higher efficiency while bypassing silicon’s limitations.
Explore Intel's investment potential amid U.S. semiconductor strategies, market challenges, and a rumored AMD-TSMC joint venture offering revitalization, along with a new CEO.
Developers from Peking University have announced the creation of the world’s first two-dimensional low-power transistor GAAFET. Chinese researchers call their own development a «multilayer, lamellar, ...
A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.
VIJAYAWADA: The world can witness the arrival of a groundbreaking, gate-all-around nanosheet transistor technology, poised to bring revolutionary adva.