Contrary to numerous pessimistic prognostications over recent years, including by Nvidia CEO Jensen Huang, Moore's Law is ...

Intel has published a paper about its 18A (1.8nm-class) fabrication process at the VLSI 2025 symposium, consolidating all its ...

The University of Tokyo (UTokyo) and TSMC (TWSE: 2330, NYSE: TSM) today announced the opening of the "TSMC-UTokyo Lab", dedicated to advancing semiconductor research, education and talent incubation.

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...

Integrated circuits have evolved from simple microchips to complex, nanoscale marvels, driving advances in computing, ...

The new 7-bit 150 GSa/s Digital-to-Analog Converter (DAC), fabricated in a 5nm FinFET CMOS process, achieves data rates of up ...

We have developed a methodology that analyzes the dimensions and conformal doping profiles in fin field effect transistors (FinFET) using time-of-flight medium energy ion scattering (TOF-MEIS). The ...

TAIPEI (Taiwan News) — TSMC announced Thursday the establishment of its first joint semiconductor laboratory with an overseas university, the TSMC-UTokyo Lab, at the University of Tokyo.

Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.

In this paper we investigate the impact of stress, developed during FinFET device fabrication, on electrical characteristics of transistors manufactured in 7nm silicon FinFET technology. Two sources ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...