TriQuint Inc. was a leader in developing advanced semiconductor materials like gallium arsenide and gallium nitride. They ...

Photonics company Coherent has launched the SES18-880A-190-10, a high-power 880 nm single-emitter laser diode on sub mount, ...

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in ...

Coherent Corp. (NYSE: COHR), a global leader in photonics, today launches the SES18-880A-190-10, a high-power 880 nm single-emitter laser diode on sub mount, designed specifically for high-efficiency, ...

In this paper, we report the direct growth and characterization of a mid-wave infrared InAs/GaSb type-II superlattice n-B-p photodetector on a GaAs substrate. The design consists of an n-doped contact ...

The performance is consistently uniform across the entire 6-inch wafer, enabling reliable, high-yield production”. As part of a series of experiments, the research team have so far produced ...

The discovery of an intrinsic direct bandgap in single-layer MoS2 has revealed significant potential for advancements in optoelectronic and photonic applications. This study aims to explore this ...

TSMC's 2nm wafer prices hit $30,000 as SRAM yields reportedly hit 90% Apple, Intel, Nvidia, and others line up for next-gen chips By Daniel Sims June 2, 2025, 17:05 20 comments ...

Abstract: A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled c-cut Nd:GdVO 4 /KTP green laser with a GaAs saturable absorber is presented. Nearly 100% modulation depth ...

SHERMAN, Texas (KTEN) — GlobalWafers America recently opened its newest facility in Sherman, but you might be wondering: What do they do?