A world-first N-polar GaN wafer created by Chinese scientists is set to be a game changer for the semiconductor industry A breakthrough in next-generation semiconductor technology has been announced ...
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...
(MENAFN- EIN Presswire) The report presents information related to key drivers, restraints, and opportunities with a detailed impact on silicon EPI wafer market analysis. silicon EPI wafer market ...
Infineon has been able to produce GaN chips on 300 milimetre wafers, in a development hailed by the company as a world first. Hanebeck said 2.3 times more GaN chips can fit on a 300mm wafer than ...