STMicroelectronics and Innoscience have joined forces to enhance GaN technology for AI data centers, EVs, and renewable ...
A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
STMicroelectronics (STM) and Innoscience announce the signature of an agreement on GaN technology development and manufacturing, leveraging the ...
The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...
(MENAFN- EIN Presswire) The report presents information related to key drivers, restraints, and opportunities with a detailed impact on silicon EPI wafer market analysis. silicon EPI wafer market ...
Infineon has been able to produce GaN chips on 300 milimetre wafers, in a development hailed by the company as a world first. Hanebeck said 2.3 times more GaN chips can fit on a 300mm wafer than ...