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Abstract: Internal laser parameters and characteristic temperature T 0 of a GaInAsN-GaAs quantum-dot (QD) laser emitting above 1350 nm were determined. Continuous-wave operation of GaInAsN-GaAs QD ...
Abstract: Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved ... represents the first realization of efficient ...
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