Abstract: Internal laser parameters and characteristic temperature T 0 of a GaInAsN-GaAs quantum-dot (QD) laser emitting above 1350 nm were determined. Continuous-wave operation of GaInAsN-GaAs QD ...

Abstract: We present results of laser-induced analog SETs at elevated temperatures. We found increasing pulse widths with increasing temperature for the LM124. We also observed increasing pulse ...

† Key Laboratory of Materials for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China ‡ Graduate School of ...