To achieve this, the team employed a weak application of the gate-induced drain leakage (GIDL) erase mechanism in V-NAND ...

Delhi under Emergency, bulldozer demolitions, police brutality, resistance, and media censorship during dark times in India.

Applied Materials AMAT is benefiting from rising demand for AI infrastructure, with its Logic and DRAM businesses gaining traction. Since AI operations need both logic chips to process AI workloads ...

Goldman Sachs initiated coverage on U.S. semiconductor capital equipment, storage, and foundry stocks in a note Thursday, holding a “balanced view,” highlighting mid-cycle dynamics that present ...

A planar floating-gate NAND technology has previously realized a 0.87Gb/mm2 memory density using 3b/cell [1] and achieved a minimum feature size for 16nm [2]. However, the development of planar NAND ...

SK hynix to reportedly change wafer cutting for its next-gen HBM4 memory and 400-layer NAND flash, as they're becoming ...

NAND flash manufacturers have been implementing production cuts, leading to urgent orders to surge and leaving a supply ...

State Bank of India, the country's largest lender by assets, said on Thursday it will consider raising funds via issuance of ...

As electronic devices become more advanced, integrating complex logic into a single component becomes essential. Enter AND6, ...

We propose an electron back-tunneling (EBT) method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory. The storage of back-tunneled electrons in the spacer region between ...

Consider Nvidia, whose market value just topped a staggering $4 trillion. Or the Nasdaq 100, which now trades for more than ...