the prototype consumes 35 nW at 90 kS/s and achieves an ENOB of 8.38 bit and a SFDR of 78.2 dB, respectively. The operation frequency is scalable up to 2 MS/s and power supply range from 0.3 V to 0.5 ...

Implemented in a 130-nm SiGe process, the circuit is optimized for low power dissipation. For the core functionality, an energy efficiency of 1 pJ/bit is achieved, which is one of the best values ...