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Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...
Abstract: Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low ...
Abstract: Low contact resistance to digital alloys of n-type AlGaN/AlN with high average Al concentration is described. Low-energy electron diffraction was used to evaluate surface precleaning with ...
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China Center of Materials Science and ...